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| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | - |
| 双向通道: | 1 |
| 电压 - 反向间隔（典型值）: | 150V |
| 电压 - 击穿（分钟）: | 167V |
| 电压 - 钳位（最大值）@ ipp: | 243V |
| 电流 - 峰值脉冲 (10/1000µs): | 124A |
| 功率-峰值脉冲: | 30000W (30kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | Nonstandard SMD |
| 供应商设备包: | PLAD |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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MXLPLAD30KP18CARoving Networks / Microchip Technology |
TVS DIODE 18V 30.8V PLAD |
|
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MPLAD7.5KP48CAE3Roving Networks / Microchip Technology |
TVS DIODE |
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SMCJ6.5AHE3_A/HVishay General Semiconductor – Diodes Division |
TVS DIODE DO214AB |
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SMCJ64A-T7Wickmann / Littelfuse |
TVS DIODE 64V 103V DO214AB |
|
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MSMBJ16A/TRRoving Networks / Microchip Technology |
TVS |
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MXLSMCGLCE24AE3Roving Networks / Microchip Technology |
TVS DIODE 24V 38.9V DO215AB |
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MXLPLAD36KP150AE3Roving Networks / Microchip Technology |
TVS DIODE 150V 243V PLAD |
|
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MAP6KE12ARoving Networks / Microchip Technology |
TVS DIODE 10.2V 16.7V T-18 |
|
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MXLP6KE33CARoving Networks / Microchip Technology |
TVS DIODE 28.2V 45.7V T-18 |
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MXLPLAD30KP48CARoving Networks / Microchip Technology |
TVS DIODE 48V 77.4V PLAD |
|
|
MASMLG17CAE3Roving Networks / Microchip Technology |
TVS DIODE 17V 27.6V DO215AB |
|
|
MXPLAD30KP90ARoving Networks / Microchip Technology |
TVS DIODE 90V 146V PLAD |
|
|
MXL1.5KE51CARoving Networks / Microchip Technology |
TVS DIODE 43.6V 70.1V CASE-1 |
