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| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | 1 |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | 43V |
| 电压 - 击穿（分钟）: | 47.8V |
| 电压 - 钳位（最大值）@ ipp: | 69.4V |
| 电流 - 峰值脉冲 (10/1000µs): | 43.2A |
| 功率-峰值脉冲: | 3000W (3kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -65°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | DO-214AB, SMC |
| 供应商设备包: | SMLJ (DO-214AB) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
TPSMB16AHM3_A/HVishay General Semiconductor – Diodes Division |
600W 16V 5% SMB PAR |
|
|
1N6146USSemtech |
TVS DIODE 11.4V 21.9V |
|
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MXLPLAD36KP85CAE3Roving Networks / Microchip Technology |
TVS DIODE 85V 137V PLAD |
|
|
MXPLAD36KP14ARoving Networks / Microchip Technology |
TVS DIODE 14V 24V PLAD |
|
|
MXLPLAD36KP150ARoving Networks / Microchip Technology |
TVS DIODE 150V 243V PLAD |
|
|
MASMCGLCE14AE3Roving Networks / Microchip Technology |
TVS DIODE 14V 23.2V DO215AB |
|
|
MQ1N8169Roving Networks / Microchip Technology |
TVS DIODE |
|
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SMAJ350E3/TR13Roving Networks / Microchip Technology |
TVS DIODE 350V DO214AC |
|
|
MXSMLG20CAE3Roving Networks / Microchip Technology |
TVS DIODE 20V 32.4V DO215AB |
|
|
MXLSMLG18CAE3Roving Networks / Microchip Technology |
TVS DIODE 18V 29.2V DO215AB |
|
|
M1.5KE220ARoving Networks / Microchip Technology |
TVS DIODE 185V 328V CASE-1 |
|
|
30KPA64CE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 64V P600 |
|
|
MALCE24AE3Roving Networks / Microchip Technology |
TVS DIODE 24V 38.9V CASE-1 |
