







RF ULTRA HIGH FREQUENCY BAND, N-
TVS DIODE
CONN RCPT FMALE 10POS GOLD CRIMP
HIGH POWER SAMPLE KIT
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | - |
| 单向通道: | - |
| 双向通道: | - |
| 电压 - 反向间隔(典型值): | - |
| 电压 - 击穿(分钟): | - |
| 电压 - 钳位(最大值)@ ipp: | - |
| 电流 - 峰值脉冲 (10/1000µs): | - |
| 功率-峰值脉冲: | - |
| 电源线保护: | - |
| 应用: | - |
| 电容@频率: | - |
| 工作温度: | - |
| 安装类型: | - |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
1.5SMC82CAHE3_A/HVishay General Semiconductor – Diodes Division |
TVS DIODE 1500W DO-214AB |
|
|
SMCJ51CAHE3_A/HVishay General Semiconductor – Diodes Division |
TVS DIODE DO214AB |
|
|
MASMLG150AE3Roving Networks / Microchip Technology |
TVS DIODE 150V 243V DO215AB |
|
|
MASMCG170CARoving Networks / Microchip Technology |
TVS DIODE 170V 275V DO215AB |
|
|
5KP58E3/TR13Roving Networks / Microchip Technology |
TVS DIODE 58V 103V P600 |
|
|
MXLPLAD18KP18CAE3Roving Networks / Microchip Technology |
TVS DIODE 18V 29.2V PLAD |
|
|
MSMBJ11CA/TRRoving Networks / Microchip Technology |
TVS |
|
|
MPLAD7.5KP12AE3Roving Networks / Microchip Technology |
TVS DIODE |
|
|
JANTXV1N6161AUSRoving Networks / Microchip Technology |
TVS DIODE 47.1V 85.3V C SQ-MELF |
|
|
MASMLG70CARoving Networks / Microchip Technology |
TVS DIODE 70V 113V DO215AB |
|
|
JTX1N6105ASemtech |
T MET BI 500W 9V1 |
|
|
MPLAD36KP78ARoving Networks / Microchip Technology |
TVS DIODE 78V 126V PLAD |
|
|
5KP11CAE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 11V 18.2V P600 |