English
简体中文
CAP CER 10PF 200V C0G/NP0 1210
WEDGE BASED INDICATOR
RES 3.4K OHM 0.5% 1/8W 1206
TVS DIODE 23.1V 37.5V T-18
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | - |
| 双向通道: | 1 |
| 电压 - 反向间隔（典型值）: | 23.1V |
| 电压 - 击穿（分钟）: | 25.7V |
| 电压 - 钳位（最大值）@ ipp: | 37.5V |
| 电流 - 峰值脉冲 (10/1000µs): | 16A |
| 功率-峰值脉冲: | 600W |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -65°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | T-18, Axial |
| 供应商设备包: | T-18 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
15KPA110CA-HRWickmann / Littelfuse |
TVS DIODE 110V 178.6V P600 |
|
|
MAP6KE16CAE3Roving Networks / Microchip Technology |
TVS DIODE 13.6V 22.5V T-18 |
|
|
JANTXV1N6149AUSRoving Networks / Microchip Technology |
TVS DIODE 15.2V 27.7V C SQ-MELF |
|
|
SM15T36AHE3_A/HVishay General Semiconductor – Diodes Division |
TVS DIODE DO214AB |
|
|
MXLPLAD15KP18CAE3Roving Networks / Microchip Technology |
TVS DIODE 18V 29.2V PLAD |
|
|
MSMCJ85A/TRRoving Networks / Microchip Technology |
TVS |
|
|
CD214C-T10CALFJ.W. Miller / Bourns |
TVS DIODE 10V 17V SMC |
|
|
MASMCG12CARoving Networks / Microchip Technology |
TVS DIODE 12V 19.9V DO215AB |
|
|
MASMCGLCE30ARoving Networks / Microchip Technology |
TVS DIODE 30V 48.4V DO215AB |
|
|
SMCJ15A-HFComchip Technology |
DIODE TVS 15V 1500W SMC UNI-DIR |
|
|
MV1N8172USRoving Networks / Microchip Technology |
TVS DIODE |
|
|
1N5556Roving Networks / Microchip Technology |
TVS DIODE 40.3V 63.5V DO13 |
|
|
SMB10J85CA-TPMicro Commercial Components (MCC) |
1000W TVS, SMB |