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DIODE ESD ULTRA LOW CAPACITANCE
FIXED IND 1UH 5.4A 13 MOHM TH
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| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 类型: | - |
| 单向通道: | 2 |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | 5V |
| 电压 - 击穿（分钟）: | 6V |
| 电压 - 钳位（最大值）@ ipp: | 15V |
| 电流 - 峰值脉冲 (10/1000µs): | - |
| 功率-峰值脉冲: | 125W |
| 电源线保护: | - |
| 应用: | - |
| 电容@频率: | 0.9pF @ 1MHz |
| 工作温度: | - |
| 安装类型: | Surface Mount |
| 包/箱: | SOT-523 |
| 供应商设备包: | SOT-523 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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MXPLAD18KP7.5ARoving Networks / Microchip Technology |
TVS DIODE 7.5V 12.9V PLAD |
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MXPLAD7.5KP17ARoving Networks / Microchip Technology |
TVS DIODE |
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MXLSMCGLCE7.5ARoving Networks / Microchip Technology |
TVS DIODE 7.5V 12.9V DO215AB |
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MPLAD36KP200AE3Roving Networks / Microchip Technology |
TVS DIODE 200V 322V PLAD |
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SMCJ51AHE3_A/IVishay General Semiconductor – Diodes Division |
TVS DIODE DO214AB |
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MAPLAD30KP54CAE3Roving Networks / Microchip Technology |
TVS DIODE 54V 87.1V PLAD |
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1N5647Roving Networks / Microchip Technology |
TVS DIODE |
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MXPLAD30KP30AE3Roving Networks / Microchip Technology |
TVS DIODE 30V 48.8V PLAD |
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1.5SMC160CAHE3_A/HVishay General Semiconductor – Diodes Division |
TVS DIODE 1500W DO-214AB |
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MSMBJ20CA/TRRoving Networks / Microchip Technology |
TVS |
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JTXV1N6143AUSSemtech |
T MET BI 1500W 11V SM |
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MXL1.5KE75AE3Roving Networks / Microchip Technology |
TVS DIODE 64.1V 103V CASE-1 |
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1N6120Roving Networks / Microchip Technology |
TVS DIODE |