







VI-R1221-IXXX 24V/15V 15V 12V
T MET BI 1500W
FCT ML DSUB SDR PLG 21WA4 NM
CONN RCPT 2POS CABLE SEALED
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | - |
| 单向通道: | - |
| 双向通道: | - |
| 电压 - 反向间隔(典型值): | - |
| 电压 - 击穿(分钟): | - |
| 电压 - 钳位(最大值)@ ipp: | - |
| 电流 - 峰值脉冲 (10/1000µs): | - |
| 功率-峰值脉冲: | - |
| 电源线保护: | - |
| 应用: | - |
| 电容@频率: | - |
| 工作温度: | - |
| 安装类型: | - |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
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MXLSMCG7.5ARoving Networks / Microchip Technology |
TVS DIODE 7.5V 12.9V DO215AB |
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DLTS8CAMicrosemi |
TVS DIODE 8V 12.2V 16DIP |
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MXLSMCJ6.5A/TRRoving Networks / Microchip Technology |
HI REL TVS |
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MSMCJLCE22AE3/TRRoving Networks / Microchip Technology |
TVS |
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MXLPLAD36KP120AE3Roving Networks / Microchip Technology |
TVS DIODE 120V 193V PLAD |
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MLCE170ARoving Networks / Microchip Technology |
TVS DIODE 170V 275V CASE-1 |
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MXLPLAD15KP12ARoving Networks / Microchip Technology |
TVS DIODE 12V 19.9V PLAD |
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MSMLG26AE3Roving Networks / Microchip Technology |
TVS DIODE 26V 42.1V DO215AB |
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MXLCE130AE3Roving Networks / Microchip Technology |
TVS DIODE 130V 209V CASE-1 |
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SMAJ160E3/TR13Roving Networks / Microchip Technology |
TVS DIODE 160V 287V DO214AC |
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TPSMC33AHE3_B/IVishay General Semiconductor – Diodes Division |
TVS DIODE 28.2V 45.7V DO214AB |
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30KPA150AE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 150V 233.4V P600 |
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MXPLAD30KP48AE3Roving Networks / Microchip Technology |
TVS DIODE 48V 77.4V PLAD |