







TVS DIODE 130V 209V PLAD
SINGLE ON BASE VALVE
| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | 1 |
| 双向通道: | - |
| 电压 - 反向间隔(典型值): | 130V |
| 电压 - 击穿(分钟): | 144V |
| 电压 - 钳位(最大值)@ ipp: | 209V |
| 电流 - 峰值脉冲 (10/1000µs): | 87A |
| 功率-峰值脉冲: | 18000W (18kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | Nonstandard SMD |
| 供应商设备包: | PLAD |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
MSMLG5.0AE3/TRRoving Networks / Microchip Technology |
TVS |
|
|
MXLUPTB5E3Roving Networks / Microchip Technology |
TVS DIODE |
|
|
MAPLAD15KP7.0AE3Roving Networks / Microchip Technology |
TVS DIODE 7V 12V PLAD |
|
|
MXLP6KE82AE3Roving Networks / Microchip Technology |
TVS DIODE 70.1V 113V T-18 |
|
|
RCLAMP2578N.TCTSemtech |
TVS DIODE |
|
|
JAN1N6158USRoving Networks / Microchip Technology |
TVS DIODE 35.8V 67.83V C SQ-MELF |
|
|
VESD05A8C-HNH-GS08Vishay General Semiconductor – Diodes Division |
TVS DIODE 5V 13V LLP1713-9L |
|
|
JANTXV1N6145AUSRoving Networks / Microchip Technology |
TVS DIODE 9.9V 18.2V C SQ-MELF |
|
|
MPLAD7.5KP26CA/TRRoving Networks / Microchip Technology |
TVS |
|
|
MXLPLAD36KP300ARoving Networks / Microchip Technology |
TVS DIODE 300V 483V PLAD |
|
|
LC7.0ARoving Networks / Microchip Technology |
TVS DIODE 7V 12V DO202AA |
|
|
1N6157ARoving Networks / Microchip Technology |
TVS DIODE 32.7V 59.1V AXIAL |
|
|
MXPLAD18KP58CAE3Roving Networks / Microchip Technology |
TVS DIODE 58V 93.6V PLAD |