| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500/516 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | - |
| 双向通道: | 1 |
| 电压 - 反向间隔(典型值): | 13.7V |
| 电压 - 击穿(分钟): | 17.1V |
| 电压 - 钳位(最大值)@ ipp: | 25.1V |
| 电流 - 峰值脉冲 (10/1000µs): | 59.8A |
| 功率-峰值脉冲: | 1500W (1.5kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | SQ-MELF, C |
| 供应商设备包: | C, SQ-MELF |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
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JAN1N6108Roving Networks / Microchip Technology |
TVS DIODE 9.1V 17.75V AXIAL |
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MXPLAD7.5KP48ARoving Networks / Microchip Technology |
TVS DIODE |
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MXPLAD7.5KP24ARoving Networks / Microchip Technology |
TVS DIODE |
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5KP28AE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 28V 45.4V P600 |
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MXLP6KE51CARoving Networks / Microchip Technology |
TVS DIODE 43.6V 70.1V T-18 |
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MAPLAD7.5KP33AE3Roving Networks / Microchip Technology |
TVS DIODE |
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MLCE58AE3Roving Networks / Microchip Technology |
TVS DIODE 58V 93.6V CASE-1 |
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MXLCE9.0ARoving Networks / Microchip Technology |
TVS DIODE 9V 15.4V CASE-1 |
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JTX1N6133Semtech |
T MET BI 500W 130V |
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JAN1N6130ARoving Networks / Microchip Technology |
TVS DIODE 76V 137.6V AXIAL |
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SMB6F14AYSTMicroelectronics |
AUTOMOTIVE 600 W, 14 V TVS IN SM |
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JANTX1N5770Roving Networks / Microchip Technology |
TVS DIODE 10CFLATPACK |
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MPLAD18KP9.0ARoving Networks / Microchip Technology |
TVS DIODE 9V 15.4V PLAD |