







TVS DIODE 6.5V 11.2V 425TEPBGA I
5.0X3.2 30PPM @25C 30PPM (-20 TO
CRYSTAL 13.5600MHZ 12PF SMD
.050 X .050 C.L. FEMALE IDC ASSE
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | 1 |
| 双向通道: | - |
| 电压 - 反向间隔(典型值): | 6.5V |
| 电压 - 击穿(分钟): | 7.22V |
| 电压 - 钳位(最大值)@ ipp: | 11.2V |
| 电流 - 峰值脉冲 (10/1000µs): | 53.6A |
| 功率-峰值脉冲: | 600W |
| 电源线保护: | No |
| 应用: | Telecom |
| 电容@频率: | 2140pF @ 1MHz |
| 工作温度: | -65°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 425-FBGA |
| 供应商设备包: | 425-TEPBGA I (19x19) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
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MA5KP13ARoving Networks / Microchip Technology |
TVS DIODE 13V 21.5V DO204AR |
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SMAJ60CA M2GTSC (Taiwan Semiconductor) |
TVS DIODE 60V 96.8V DO214AC |
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MXLSMBJ8.5CAE3Roving Networks / Microchip Technology |
TVS DIODE 8.5V 14.4V DO214AA |
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SMF9V0A-M3-18Vishay General Semiconductor – Diodes Division |
TVS DIODE 9V 15.4V DO219AB |
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TVS DIODE 28V 45.4V DO214AA |
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MXLSMCJLCE26AE3Roving Networks / Microchip Technology |
TVS DIODE 26V 42.1V DO214AB |
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TVS DIODE 80V 129V DO214AB |
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MAP4KE51AE3Roving Networks / Microchip Technology |
TVS DIODE 43.6V 70.1V DO204AL |
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MSMCJLCE90AE3Roving Networks / Microchip Technology |
TVS DIODE 90V 146V DO214AB |
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20KPA104AWickmann / Littelfuse |
TVS DIODE 104V 168V P600 |
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1.5KE15A-E3/73Vishay General Semiconductor – Diodes Division |
TVS DIODE 12.8V 21.2V 1.5KE |
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SMAJ11CA-TPMicro Commercial Components (MCC) |
TVS DIODE 11V 18.2V DO214AC |