English
简体中文
XTAL OSC VCXO 125.0000MHZ HCSL
IC REG LINEAR 1.5V/2.8V 6TMLF
INSULATION DISPLACEMENT TERMINAL
IC RAM 8GBIT PARALLEL 180FBGA
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | RAM |
| 技术: | SGRAM - GDDR6 |
| 内存大小: | 8Gb (256M x 32) |
| 内存接口: | Parallel |
| 时钟频率: | 1.5 GHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | 1.21V ~ 1.29V |
| 工作温度: | -40°C ~ 105°C |
| 安装类型: | Surface Mount |
| 包/箱: | 180-TFBGA |
| 供应商设备包: | 180-FBGA (12x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
IS46TR16512AL-15HBLA2-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 8GBIT PARALLEL 96LFBGA |
|
|
MT29C4G96MAZBACJG-5 WT TRMicron Technology |
IC FLASH RAM 4GBIT PAR 168VFBGA |
|
|
N25Q128A13EV740Micron Technology |
IC FLASH 128MBIT SPI 108MHZ |
|
|
CAT25640ZI-GT3Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 64KBIT SPI 8MSOP |
|
|
N25Q256A73ESF40G TRMicron Technology |
IC FLASH 256MBIT SPI 16SOP2 |
|
|
MT42L128M32D2KL-3 IT:AMicron Technology |
IC DRAM 4GBIT PARALLEL 168FBGA |
|
|
MT29F2T08CUCBBK9-37ES:BMicron Technology |
IC FLASH 2TB PARALLEL 267MHZ |
|
|
W972GG8JB-18Winbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 60WBGA |
|
|
MT29E256G08CMCDBJ5-6:DMicron Technology |
IC FLASH 256GBIT PAR 132TBGA |
|
|
70V9089S9PFI8Renesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
|
7130SA55TFIRenesas Electronics America |
IC SRAM 8KBIT PARALLEL 64TQFP |
|
|
CAT25160HU2IGT3CSanyo Semiconductor/ON Semiconductor |
IC EEPROM 16KB SER SPI 8UDFN |
|
|
7143LA90J8Renesas Electronics America |
IC SRAM 32KBIT PARALLEL 68PLCC |