English
简体中文
CRYSTAL 10.0000MHZ 18PF SMD
B946 7140-1HV BLK/YEL
FIXED IND 330UH 700MA 738 MOHM
IC DRAM 128MBIT PARALLEL 60FBGA
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM |
| 内存大小: | 128Mb (16M x 8) |
| 内存接口: | Parallel |
| 时钟频率: | 167 MHz |
| 写周期时间 - 字，页: | 12ns |
| 访问时间: | 5.4 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 60-FBGA |
| 供应商设备包: | 60-FBGA (8x16) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
25LC640/SRoving Networks / Microchip Technology |
IC EEPROM 64KBIT SPI 2MHZ DIE |
|
|
7005S20PFI8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 64TQFP |
|
|
70V37L15PF8/ERenesas Electronics America |
IC SRAM 576KBIT PARALLEL 100TQFP |
|
|
IS46TR85120A-125KBLA2-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 78TWBGA |
|
|
7005L15JRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 68PLCC |
|
|
MT29F64G08ABEBBH6-12:B TRMicron Technology |
IC FLASH 64GBIT PARALLEL 152VBGA |
|
|
R1QGA4418RBG-25IYFRenesas Electronics America |
IC MEMORY DDR LBGA |
|
|
CG8350AACypress Semiconductor |
IC SRAM |
|
|
MT53D4DBBD-DCMicron Technology |
SPECIAL/CUSTOM LPDDR4 |
|
|
MT41K512M16TNA-125 M:E TRMicron Technology |
IC DRAM 8GBIT PARALLEL 96FBGA |
|
|
CG8200AACypress Semiconductor |
IC SRAM |
|
|
MT53D512M64D4RQ-046 WT ES:E TRMicron Technology |
IC DRAM 32GBIT 2133MHZ 556WFBGA |
|
|
M27C256B-10C6STMicroelectronics |
IC EPROM 256KBIT PARALLEL 32PLCC |