English
简体中文
CIR BRKR MAG-HYDR 40A 125VDC
MEMS OSC XO 166.666666MHZ LVCMOS
BIG CHIP LED HB MOD 450LM WHITE
IC FLASH 32GBIT MMC 153VFBGA
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | e•MMC™ |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NAND |
| 内存大小: | 32Gb (4G x 8) |
| 内存接口: | MMC |
| 时钟频率: | - |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 153-VFBGA |
| 供应商设备包: | 153-VFBGA (11.5x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
SM662GE4-ACHSilicon Motion |
FERRI-EMMC BGA 100-B EMMC 5.0 ML |
|
|
93LC46C-I/WF15KRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 3MHZ DIE |
|
|
MT53D512M64D4SB-046 XT ES:EMicron Technology |
IC DRAM 32GBIT 2133MHZ FBGA |
|
|
MTFC16GJTEC-ITMicron Technology |
IC FLASH 128GBIT MMC 169WFBGA |
|
|
MT29F512G08CUCABH3-10ITZ:AMicron Technology |
IC FLASH 512GBIT PAR 100LBGA |
|
|
DS2433X-300-ECMaxim Integrated |
IC EEPROM 4KBIT 1-WIRE 6FLIPCHIP |
|
|
C3FBLY000085Cypress Semiconductor |
IC FLASH MEMORY NOR |
|
|
IS46TR16512AL-125KBLA2-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 8GBIT PARALLEL 96LFBGA |
|
|
MT53D4D1ASQ-DCMicron Technology |
LPDDR4 0 768MX64 FBGA QDP |
|
|
25LC080A-I/S15KRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 10MHZ DIE |
|
|
CG8217AATCypress Semiconductor |
IC SRAM 16M PARALLEL 48VFBGA |
|
|
MT4A512M16LY-75:EMicron Technology |
IC SDRAM 8GB DDR4 FBGA |
|
|
MT53B128M32D1Z00NEC2Micron Technology |
LPDDR4 4G DIE 128MX32 |