







PROBE FLAT POINTED NYLON 6.78"
B853 5.75X3 RED/BLK/WHT 2-SIDED
JFET N-CH 20V 0.1W TO-92S
IC FLASH 4GBIT PARALLEL
| 类型 | 描述 |
|---|---|
| 系列: | MS-2 |
| 包裹: | Bulk |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NAND |
| 内存大小: | 4Gb (256M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字,页: | 45ns |
| 访问时间: | 45 ns |
| 电压 - 电源: | 1.7V ~ 1.95V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | - |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
IS43LR32320B-5BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 90LFBGA |
|
|
MT49H8M36BM-25:B TRMicron Technology |
IC DRAM 288MBIT PARALLEL 144UBGA |
|
|
S71WS256NC0BAWAP0GCypress Semiconductor |
IC GATE NOR |
|
|
MTFC32GJGDQ-AIT TRMicron Technology |
IC FLASH 256GBIT MMC 100LBGA |
|
|
MTFC64GAPALNA-AIT TRMicron Technology |
EMMC 512GBIT MMC5.1 J58X AT |
|
|
AK93C95AFAsahi Kasei Microdevices / AKM Semiconductor |
IC EEPROM 32KBIT SPI 8SOP |
|
|
M29W128GL70N3EMicron Technology |
IC FLASH 128MBIT PARALLEL 56TSOP |
|
|
IS46DR16320C-3DBA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 84TWBGA |
|
|
LE25CB643TT-TLM-ESanyo Semiconductor/ON Semiconductor |
IC EEPROM 64KBIT |
|
|
593995-003-38Cypress Semiconductor |
IC FLASH |
|
|
W29N01HVBIAAWinbond Electronics Corporation |
IC FLASH 1GBIT NAND 63VFBGA |
|
|
CG7910AATCypress Semiconductor |
IC SRAM 100TQFP |
|
|
MT53D1024M64D8NW-046 WT ES:DMicron Technology |
IC DRAM 64GBIT 2133MHZ 432VFBGA |