English
简体中文
MEMS OSC DCXO 220.0000MHZ LVCMOS
SQUARE FLANGE RECETACLE
CONN RCPT FMALE 29POS GOLD CRIMP
IC EEPROM 512KBIT I2C 400KHZ DIE
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 512Kb (64K x 8) |
| 内存接口: | I²C |
| 时钟频率: | 400 kHz |
| 写周期时间 - 字，页: | 5ms |
| 访问时间: | 900 ns |
| 电压 - 电源: | 1.7V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | Die |
| 供应商设备包: | Die |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
7007S20JRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 68PLCC |
|
|
MT29C2G24MAAAAHAML-5 ITMicron Technology |
IC FLASH RAM 2GBIT PAR 153VFBGA |
|
|
M25P10-V6D11Micron Technology |
IC FLASH 1MBIT SPI 50MHZ |
|
|
S99AL016J0109Cypress Semiconductor |
IC FLASH |
|
|
MT41K256M16HA-125 M AIT:EMicron Technology |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
|
MT29F64G08ABCBBH6-6IT:B TRMicron Technology |
IC FLASH 64GBIT PARALLEL 152VBGA |
|
|
CAT25128LI-GDSanyo Semiconductor/ON Semiconductor |
IC EEPROM 128KBIT SPI 8DIP |
|
|
S25FL164K0XWEV009Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD WAFER |
|
|
S99-50204ACypress Semiconductor |
IC MEMORY 512MB PAGE 64FBGA |
|
|
MT53D512M64D4NW-062 WT ES:D TRMicron Technology |
IC DRAM 32GBIT 1600MHZ 432VFBGA |
|
|
70V27S15BFRenesas Electronics America |
IC SRAM 512KBIT PAR 144CABGA |
|
|
70V35S20PFI8Renesas Electronics America |
IC SRAM 144K PARALLEL 100TQFP |
|
|
MT47H64M16HR-25E XIT:H TRMicron Technology |
IC DRAM 1GBIT PARALLEL 84FBGA |