类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - Mobile LPDDR2 |
内存大小: | 8Gb (256M x 32) |
内存接口: | Parallel |
时钟频率: | 400 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.14V ~ 1.3V |
工作温度: | -30°C ~ 85°C (TC) |
安装类型: | Surface Mount |
包/箱: | 168-WFBGA |
供应商设备包: | 168-FBGA (12x12) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CG8729AFCypress Semiconductor |
IC SOC WIFI WICED 56QFN |
|
MT49H32M18BM-25E:BMicron Technology |
IC DRAM 576MBIT PARALLEL 144UBGA |
|
93AA76C/S15KRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 3MHZ DIE |
|
N25Q008A11ESC40F TRMicron Technology |
IC FLASH 8MBIT SPI 108MHZ SOIC |
|
S29AL008J70WHN029Cypress Semiconductor |
IC FLASH 8MBIT PARALLEL WAFER |
|
PC28F064M29EWTXMicron Technology |
IC FLASH 64MBIT PARALLEL 64FBGA |
|
M58WR032KB70ZQ6ZMicron Technology |
IC FLASH 32MBIT PARALLEL 88VFBGA |
|
MT48LC64M4A2BB-6A:GMicron Technology |
IC DRAM 256MBIT PARALLEL 60TFBGA |
|
7005S20PFIRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 64TQFP |
|
MT29C4G96MAYBACJG-5 WTMicron Technology |
IC FLASH RAM 4GBIT PAR 168VFBGA |
|
MT52L512M64D4GN-107 WT ES:B TRMicron Technology |
IC DRAM 32GBIT 933MHZ 256FBGA |
|
S99PL032J70BFI120Cypress Semiconductor |
IC FLASH MEM NOR 48FBGA |
|
7006S55PFIRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 64TQFP |