类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Synchronous |
内存大小: | 1.125Mb (64K x 18) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | 7.5 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 100-LQFP |
供应商设备包: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
7130LA55JG8/2930Renesas Electronics America |
IC SRAM 8KBIT PARALLEL 52PLCC |
|
CG8561AMCypress Semiconductor |
NON VOLATILE SRAMS |
|
MT40A1G16WBU-083E:BMicron Technology |
IC DRAM 16GBIT PARALLEL 96FBGA |
|
MT29F256G08CECABH6-6:AMicron Technology |
IC FLASH 256GBIT PAR 152VBGA |
|
MT46H64M32LFCX-5 AIT:BMicron Technology |
IC DRAM 2GBIT PARALLEL 90VFBGA |
|
M59DR032EA10ZB6STMicroelectronics |
IC FLASH 32MBIT PARALLEL 48TFBGA |
|
7024S20JIRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 84PLCC |
|
7007S35JIRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 68PLCC |
|
70V25L15PFI8Renesas Electronics America |
IC SRAM 128KBIT PARALLEL 100TQFP |
|
MT29F4G08ABAFAH4-AATES:FMicron Technology |
IC FLASH 4GBIT PARALLEL 63VFBGA |
|
MT29F4G08ABAFAH4-AITES:FMicron Technology |
IC FLASH 4GBIT PARALLEL 63VFBGA |
|
DS28E01P-W0S+1TMaxim Integrated |
IC EEPROM MEMORY 1KB SMD TOSC |
|
AK6417AMAsahi Kasei Microdevices / AKM Semiconductor |
IC EEPROM 16KB SCI SSOP |