







MEMS OSC XO 25.0000MHZ H/LV-CMOS
IC EPROM 256KBIT PARALLEL 28SOIC
CIR 8C 8#12 SKT RECP WALL RTAN
CABLE ASSEM 2MM 10POS F-F 20"
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | EPROM |
| 技术: | EPROM - OTP |
| 内存大小: | 256Kb (32K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字,页: | - |
| 访问时间: | 70 ns |
| 电压 - 电源: | 3V ~ 3.6V, 4.5V ~ 5.5V |
| 工作温度: | 0°C ~ 70°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 28-SOIC (0.342", 8.69mm Width) |
| 供应商设备包: | 28-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
S34MS04G200BHB000SkyHigh Memory Limited |
IC FLASH 4G PARALLEL 63BGA |
|
|
MT48LC16M16A2TG-7E:D TRMicron Technology |
IC DRAM 256MBIT PAR 54TSOP II |
|
|
NM27C010T120Sanyo Semiconductor/ON Semiconductor |
IC EPROM 1MBIT PARALLEL 32TSOP |
|
|
JS28F256M29EBHB TRMicron Technology |
IC FLASH 256MBIT PARALLEL 56TSOP |
|
|
M29W200BB70N1Micron Technology |
IC FLASH 2MBIT PARALLEL 48TSOP |
|
|
IDT70P3537S233RMRenesas Electronics America |
IC SRAM 18MBIT PAR 576FCBGA |
|
|
M29W128FL70N6EMicron Technology |
IC FLASH 128MBIT PARALLEL 56TSOP |
|
|
CAT28C16AG20Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 16KBIT PARALLEL 32PLCC |
|
|
MT45W4MW16PFA-70 ITMicron Technology |
IC PSRAM 64MBIT PARALLEL 48VFBGA |
|
|
W632GG8KB-15Winbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 78WBGA |
|
|
IS29GL128S-10TFV02Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 56TSOP |
|
|
IS42S83200D-7TLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
|
|
IDT71V416S10PHIRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |