类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NAND (MLC) |
内存大小: | 512Gb (64G x 8) |
内存接口: | Parallel |
时钟频率: | 333 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 2.5V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 132-VBGA |
供应商设备包: | 132-VBGA (12x18) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS41C16105C-50KLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PARALLEL 42SOJ |
|
AT27C010L-55JCRoving Networks / Microchip Technology |
IC EPROM 1MBIT PARALLEL 32PLCC |
|
IS61LPS25636A-200TQ2I-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
IDT71V3576YS133PFG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
IS43R83200B-6TL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 66TSOP II |
|
NM24C02NSanyo Semiconductor/ON Semiconductor |
IC EEPROM 2KBIT I2C 100KHZ 8DIP |
|
AT25080A-10PU-2.7Roving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 20MHZ 8DIP |
|
IDT71T75702S85PFI8Renesas Electronics America |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
AT24C16N-10SIRoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 8SOIC |
|
W25Q64FVDAIQWinbond Electronics Corporation |
IC FLASH 64MBIT SPI/QUAD 8DIP |
|
CY7C1474BV33-200BGITCypress Semiconductor |
IC SRAM 72MBIT PARALLEL 209FBGA |
|
MT29E512G08CEHBBJ4-3ES:B TRMicron Technology |
IC FLASH 512GBIT PAR 132VBGA |
|
IDT71P72604S200BQRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 165CABGA |