类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR |
内存大小: | 9Mb (256K x 36) |
内存接口: | Parallel |
时钟频率: | 166 MHz |
写周期时间 - 字,页: | - |
访问时间: | 3.5 ns |
电压 - 电源: | 3.135V ~ 3.465V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 100-LQFP |
供应商设备包: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
24FC1026T-I/SMRoving Networks / Microchip Technology |
IC EEPROM 1MBIT I2C 1MHZ 8SOIJ |
|
AT24C01-10PIRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 400KHZ 8DIP |
|
IS42S16160B-7BISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 54LFBGA |
|
MT40A256M16GE-083E IT:B TRMicron Technology |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
AT24C128-10TI-2.7Roving Networks / Microchip Technology |
IC EEPROM 128KBIT I2C 8TSSOP |
|
MT46V128M4BN-6:FMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
AT24C08AN-10SC-2.7Roving Networks / Microchip Technology |
IC EEPROM 8KBIT I2C 400KHZ 8SOIC |
|
EDB1316BDBH-1DAUT-F-DMicron Technology |
IC DRAM 1GBIT PARALLEL 134VFBGA |
|
IS25LQ016B-JLLEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 16MBIT SPI/QUAD 8WSON |
|
70V9079S6PF8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 100TQFP |
|
AT49BV001T-12JIRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32PLCC |
|
CAT28F020G90Sanyo Semiconductor/ON Semiconductor |
IC FLASH 2MBIT PARALLEL 32PLCC |
|
AT25256AN-10SI-2.7Roving Networks / Microchip Technology |
IC EEPROM 256KBIT SPI 8SOIC |