类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 512Kb (64K x 8) |
内存接口: | I²C |
时钟频率: | 1 MHz |
写周期时间 - 字,页: | 10ms |
访问时间: | 500 ns |
电压 - 电源: | 1.8V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-UFDFN Exposed Pad |
供应商设备包: | 8-UFDFPN (2x3) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT24C01-10SIRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 400KHZ 8SOIC |
|
AT24C04-10PC-2.5Roving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 400KHZ 8DIP |
|
JS28F256M29EWLDMicron Technology |
IC FLASH 256MBIT PARALLEL 56TSOP |
|
AT49BV002NT-90JCRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32PLCC |
|
AS4C4M16D1-5TCNTRAlliance Memory, Inc. |
IC DRAM 64MBIT PAR 66TSOP II |
|
NAND01GR3B2CZA6EMicron Technology |
IC FLASH 1GBIT PARALLEL 63VFBGA |
|
MT29F128G08AMCABH2-10ITZ:AMicron Technology |
IC FLASH 128GBIT PAR 100TBGA |
|
IS46TR16640CL-125JBLA25ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 96TWBGA |
|
CAT28F010H90Sanyo Semiconductor/ON Semiconductor |
IC FLASH 1MBIT PARALLEL 32TSOP |
|
IDT71V416VS10PHRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
AT49F001AN-55TURoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32TSOP |
|
IS45S32400E-7BLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 90TFBGA |
|
IDT71V416YS20PH8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |