







 
                            COMP O=1.460,L= 5.00,W= .112
 
                            IC EEPROM 1KBIT SPI 2MHZ 8MAP
| 类型 | 描述 | 
|---|---|
| 系列: | - | 
| 包裹: | Tube | 
| 零件状态: | Obsolete | 
| 内存类型: | Non-Volatile | 
| 内存格式: | EEPROM | 
| 技术: | EEPROM | 
| 内存大小: | 1Kb (128 x 8, 64 x 16) | 
| 内存接口: | SPI | 
| 时钟频率: | 2 MHz | 
| 写周期时间 - 字,页: | 10ms | 
| 访问时间: | - | 
| 电压 - 电源: | 1.8V ~ 5.5V | 
| 工作温度: | -40°C ~ 85°C (TA) | 
| 安装类型: | Surface Mount | 
| 包/箱: | 8-VDFN Exposed Pad | 
| 供应商设备包: | 8-MAP (3x4.9) | 
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|   | AT27BV010-15VIRoving Networks / Microchip Technology | IC EPROM 1MBIT PARALLEL 32VSOP | 
|   | M93C86-MN6PSTMicroelectronics | IC EEPROM 16KBIT SPI 2MHZ 8SO | 
|   | MT40A256M16GE-075E IT:BMicron Technology | IC DRAM 4GBIT PARALLEL 96FBGA | 
|   | IDT71V3579S65PF8Renesas Electronics America | IC SRAM 4.5MBIT PARALLEL 100TQFP | 
|   | AT24C512B-TH-BRoving Networks / Microchip Technology | IC EEPROM 512KBIT I2C 8TSSOP | 
|   | IS45S32400E-7TLA1ISSI (Integrated Silicon Solution, Inc.) | IC DRAM 128MBIT PAR 86TSOP II | 
|   | MT46V32M8BG-75:G TRMicron Technology | IC DRAM 256MBIT PARALLEL 60FBGA | 
|   | AT45DB041A-JCRoving Networks / Microchip Technology | IC FLASH 4MBIT SPI 13MHZ 32PLCC | 
|   | IS42VM16800G-6BL-TRISSI (Integrated Silicon Solution, Inc.) | IC DRAM 128MBIT PARALLEL 54TFBGA | 
|   | PC28F128P30T85AMicron Technology | IC FLASH 128MBIT PAR 64EASYBGA | 
|   | MT48LC8M16LFF4-10 IT:GMicron Technology | IC DRAM 128MBIT PARALLEL 54VFBGA | 
|   | IDT71V67703S75PFIRenesas Electronics America | IC SRAM 9MBIT PARALLEL 100TQFP | 
|   | MT48LC4M16A2TG-6:GMicron Technology | IC DRAM 64MBIT PAR 54TSOP II |