类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 1Gb (128M x 8, 64M x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 60ns |
访问时间: | 95 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 64-LBGA |
供应商设备包: | 64-LBGA (11x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT28F800B3WG-9 BETMicron Technology |
IC FLASH 8MBIT PARALLEL 48TSOP I |
|
70V09L20PFRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
IS61WV5128BLL-10BI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 36TFBGA |
|
IDT71V3556S100BGI8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
IS42S32800D-7TLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 86TSOP II |
|
AT93C56-10SCRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8SOIC |
|
JS28F160B3TD70AMicron Technology |
IC FLSH 16MBIT PARALLEL 48TSOP I |
|
AS4C64M32MD2-25BCNTRAlliance Memory, Inc. |
IC DRAM 2GBIT PARALLEL 134FBGA |
|
93LC76AT-I/STRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 3MHZ 8TSSOP |
|
IDT71V3558S133BQ8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
CY14MB256J2-SXITCypress Semiconductor |
IC NVSRAM 256KBIT I2C 8SOIC |
|
S25FL032P0XMFV001MCypress Semiconductor |
IC FLASH 32MBIT SPI/QUAD 16SOIC |
|
7143LA25PFRenesas Electronics America |
IC SRAM 32KBIT PARALLEL 100TQFP |