English
简体中文
RES 0.51 OHM 0.5% 1/5W 0603
RES SMD 4.99K OHM 0.1% 5/8W 0805
PWR ENT MOD RCPT IEC320-C14 PNL
IC SRAM 1MBIT PARALLEL 32STSOP I
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 1Mb (128K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 55ns |
| 访问时间: | 55 ns |
| 电压 - 电源: | 2.3V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 32-LFSOP (0.465", 11.80mm Width) |
| 供应商设备包: | 32-sTSOP I |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NAND128W3A2BNXEMicron Technology |
IC FLASH 128MBIT PARALLEL 48TSOP |
|
MT47H64M8CB-5E:BMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
IDT71T75602S100PFRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
IDT71V65802S133PF8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
70V9389L9PRFRenesas Electronics America |
IC SRAM 1.125MBIT PAR 128TQFP |
|
M93S66-WMN6TSTMicroelectronics |
IC EEPROM 4KBIT SPI 2MHZ 8SO |
|
IS43LR16160F-6BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 60TFBGA |
|
W9725G6JB25IWinbond Electronics Corporation |
IC DRAM 256MBIT PARALLEL 84WBGA |
|
AT28C17E-20JIRoving Networks / Microchip Technology |
IC EEPROM 16KBIT PARALLEL 32PLCC |
|
IS61LPS204818A-166TQL-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 36MBIT PARALLEL 100TQFP |
|
SST39VF800A-90-4I-B3KE-TRoving Networks / Microchip Technology |
IC FLASH 8MBIT PARALLEL 48TFBGA |
|
CAT25256VE-GT3CSanyo Semiconductor/ON Semiconductor |
IC EEPROM 256KB SER SPI 8SOIC |
|
AT49F002-12TIRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32TSOP |