







 
                            IC DRAM 12GBIT 1866MHZ 200WFBGA
 
                            RAFIX 22 QR SIGNAL INDICATOR YL
| 类型 | 描述 | 
|---|---|
| 系列: | Automotive, AEC-Q100 | 
| 包裹: | Tape & Reel (TR) | 
| 零件状态: | Obsolete | 
| 内存类型: | Volatile | 
| 内存格式: | DRAM | 
| 技术: | SDRAM - Mobile LPDDR4 | 
| 内存大小: | 12Gb (384M x 32) | 
| 内存接口: | - | 
| 时钟频率: | 1.866 GHz | 
| 写周期时间 - 字,页: | - | 
| 访问时间: | - | 
| 电压 - 电源: | 1.1V | 
| 工作温度: | -40°C ~ 95°C (TC) | 
| 安装类型: | Surface Mount | 
| 包/箱: | 200-WFBGA | 
| 供应商设备包: | 200-WFBGA (10x14.5) | 
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|   | AT27LV256A-70TCRoving Networks / Microchip Technology | IC EPROM 256KBIT PARALLEL 28TSOP | 
|   | MT46V64M4P-5B:MMicron Technology | IC DRAM 256MBIT PARALLEL 66TSOP | 
|   | MT46V32M16TG-6T:FMicron Technology | IC DRAM 512MBIT PARALLEL 66TSOP | 
|   | SST39VF512-70-4C-NHE-TRoving Networks / Microchip Technology | IC FLASH 512KBIT PARALLEL 32PLCC | 
|   | EDB5432BEBH-1DAUT-F-R TRMicron Technology | IC DRAM 512MBIT PAR 134VFBGA | 
|   | IDT71V3559SA80BQGI8Renesas Electronics America | IC SRAM 4.5MBIT PAR 165CABGA | 
|   | IDT71T75602S100PF8Renesas Electronics America | IC SRAM 18MBIT PARALLEL 100TQFP | 
|   | STK14C88-3NF35ITRCypress Semiconductor | IC NVSRAM 256KBIT PAR 32SOIC | 
|   | M45PE80-VMP6TG TRMicron Technology | IC FLASH 8MBIT SPI 75MHZ 8VDFPN | 
|   | M25PE40-VMN6TP TRMicron Technology | IC FLASH 4MBIT SPI 75MHZ 8SO | 
|   | MT46V32M8TG-75:GMicron Technology | IC DRAM 256MBIT PARALLEL 66TSOP | 
|   | 70V3399S133PRFI8Renesas Electronics America | IC SRAM 2MBIT PARALLEL 128TQFP | 
|   | IS42S16800E-75EBLIISSI (Integrated Silicon Solution, Inc.) | IC DRAM 128MBIT PARALLEL 54TFBGA |