类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Asynchronous |
内存大小: | 32Kb (4K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 25ns |
访问时间: | 25 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 64-LQFP |
供应商设备包: | 64-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT24C16B-PURoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 1MHZ 8DIP |
|
IS42S32200C1-6TISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PAR 86TSOP II |
|
MT46V64M8P-75 IT:D TRMicron Technology |
IC DRAM 512MBIT PARALLEL 66TSOP |
|
AS4C256M8D3A-12BANTRAlliance Memory, Inc. |
IC DRAM 2GBIT PARALLEL 78FBGA |
|
AT28HC64BF-70PURoving Networks / Microchip Technology |
IC EEPROM 64KBIT PARALLEL 28DIP |
|
S34ML01G100TFV0C3SkyHigh Memory Limited |
IC FLASH 1GBIT PARALLEL 48TSOP I |
|
IS42S16100C1-7BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PARALLEL 60TFBGA |
|
MT46V32M8BG-6 IT:G TRMicron Technology |
IC DRAM 256MBIT PARALLEL 60FBGA |
|
M24C08-RMN6PSTMicroelectronics |
IC EEPROM 8KBIT I2C 400KHZ 8SO |
|
W25Q64CVTBIPWinbond Electronics Corporation |
IC FLASH 64MBIT SPI/QUAD 24TFBGA |
|
MT53B128M32D1NP-062 AAT:A TRMicron Technology |
IC DRAM 4GBIT 1600MHZ 200WFBGA |
|
IDT71V25761S200PF8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
W971GG8JB25IWinbond Electronics Corporation |
IC DRAM 1GBIT PARALLEL 60WBGA |