| 类型 | 描述 |
|---|---|
| 系列: | MX25xxx35/36 - MXSMIO™ |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NOR |
| 内存大小: | 64Mb (8M x 8) |
| 内存接口: | SPI |
| 时钟频率: | 104 MHz |
| 写周期时间 - 字,页: | 300µs, 5ms |
| 访问时间: | - |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 24-TBGA, CSPBGA |
| 供应商设备包: | 24-CSPBGA (6x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
IS42S32200C1-7B-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PARALLEL 90BGA |
|
|
S29CL032J0JQAI000Cypress Semiconductor |
IC FLASH 32MBIT PARALLEL 80PQFP |
|
|
MT47H32M16CC-5E L:B TRMicron Technology |
IC DRAM 512MBIT PARALLEL 84FBGA |
|
|
7142SA100PRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 48DIP |
|
|
AT25640T1-10TIRoving Networks / Microchip Technology |
IC EEPROM 64KBIT SPI 14TSSOP |
|
|
70V639S10PRF8Renesas Electronics America |
IC SRAM 2.25MBIT PAR 128TQFP |
|
|
CY7C1021BN-12VXICypress Semiconductor |
IC SRAM 1MBIT PARALLEL 44SOJ |
|
|
IS66WVE4M16ALL-70BLIISSI (Integrated Silicon Solution, Inc.) |
IC PSRAM 64MBIT PARALLEL 48TFBGA |
|
|
SST38VF6404B-70-5I-B3KERoving Networks / Microchip Technology |
IC FLASH 64MBIT PARALLEL 48TFBGA |
|
|
MT29RZ2B2DZZHHTB-18I.88FMicron Technology |
IC FLASH RAM 2GBIT PAR 162VFBGA |
|
|
CY7C1041D-10VXITCypress Semiconductor |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
|
S29GL512P11TFIV20Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 56TSOP |
|
|
STK11C88-NF25Cypress Semiconductor |
IC NVSRAM 256KBIT PAR 28SOIC |