English
简体中文
MEMS OSC XO 26.0000MHZ H/LV-CMOS
OSC XO 28.63636MHZ 3.3V HCMOS
IC TXRX NON-INVERT 3.6V 56TSSOP
IC SRAM 32MBIT PARALLEL 48TSOP I
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM |
| 内存大小: | 32Mb (4M x 8, 2M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 55ns |
| 访问时间: | 55 ns |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 48-TFSOP (0.724", 18.40mm Width) |
| 供应商设备包: | 48-TSOP I |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
70V657S12DRRenesas Electronics America |
IC SRAM 1.125MBIT PAR 208PQFP |
|
24LC044T-I/STRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 1MHZ 8TSSOP |
|
IS63LV1024L-12JLISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
70V9369L7PFRenesas Electronics America |
IC SRAM 288KBIT PARALLEL 100TQFP |
|
S29WS256R0SBHW000Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 84FBGA |
|
IS42S16800D-6T-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 54TSOP II |
|
W25Q40BWSNIGWinbond Electronics Corporation |
IC FLASH 4MBIT SPI 80MHZ 8SOIC |
|
R1LV0816ABG-5SI#S0Renesas Electronics America |
IC SRAM 8MBIT PARALLEL 48FBGA |
|
M25P80-VMW6TG TRMicron Technology |
IC FLASH 8MBIT SPI 75MHZ 8SO |
|
7005L20PFI8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 64TQFP |
|
W25Q80BVSNIGWinbond Electronics Corporation |
IC FLASH 8MBIT SPI 104MHZ 8SOIC |
|
S34MS04G200BHI003SkyHigh Memory Limited |
IC FLASH 4G PARALLEL 63BGA |
|
AT28HC256-12JIRoving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 32PLCC |