类型 | 描述 |
---|---|
系列: | WS-R |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 64Mb (4M x 16) |
内存接口: | Parallel |
时钟频率: | 108 MHz |
写周期时间 - 字,页: | 60ns |
访问时间: | 80 ns |
电压 - 电源: | 1.7V ~ 1.95V |
工作温度: | -25°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 84-VFBGA |
供应商设备包: | 84-FBGA (11.6x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT27BV1024-90VIRoving Networks / Microchip Technology |
IC EPROM 1MBIT PARALLEL 40VSOP |
|
IDT71T016SA15PHG8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
IDT71V432S7PFI8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
AT25320T2-10TI-2.7Roving Networks / Microchip Technology |
IC EEPROM 32KBIT SPI 20TSSOP |
|
70V35S15PFRenesas Electronics America |
IC SRAM 144K PARALLEL 100TQFP |
|
S29AS008J70TFI030Cypress Semiconductor |
IC FLASH 8MBIT PARALLEL 48TSOP |
|
71V3559S75BQI8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
70V27L55PFRenesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
IS42S16100E-7BISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PARALLEL 60TFBGA |
|
W971GG8KB25I TRWinbond Electronics Corporation |
IC DRAM 1GBIT PARALLEL 60WBGA |
|
AT24C16AN-10SI-1.8Roving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 8SOIC |
|
AT49BV001AT-55JIRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32PLCC |
|
MT48LC2M32B2TG-6 IT:G TRMicron Technology |
IC DRAM 64MBIT PAR 86TSOP II |