English
简体中文
MEMS OSC XO 3.5700MHZ LVCM LVTTL
MEMS OSC XO 100.0000MHZ LVCMOS
IC FLASH 128MBIT SPI/QUAD 8SOIC
IC SRAM 18MBIT PARALLEL 100TQFP
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | NoBL™ |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, SDR |
| 内存大小: | 18Mb (1M x 18) |
| 内存接口: | Parallel |
| 时钟频率: | 200 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 3 ns |
| 电压 - 电源: | 3.135V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 100-LQFP |
| 供应商设备包: | 100-TQFP (14x20) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NM93C66ENSanyo Semiconductor/ON Semiconductor |
IC EEPROM 4KBIT SPI 1MHZ 8DIP |
|
IS61DDB41M36C-250M3ISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 36MBIT PARALLEL 165LFBGA |
|
MT28F128J3BS-12 ETMicron Technology |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
RM24EP64B-BSNC-TAdesto Technologies |
IC CBRAM 64KBIT I2C 1MHZ 8SOIC |
|
MT28EW512ABA1HPC-1SITMicron Technology |
IC FLASH 512MBIT PARALLEL 64LBGA |
|
IDT71V3559SA80BG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
MT46V64M8BN-75 IT:D TRMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
IS61LPS102418A-200B3I-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
AT28C16E-15SIRoving Networks / Microchip Technology |
IC EEPROM 16KBIT PARALLEL 24SOIC |
|
AS4C128M16D3LA-12BCNTRAlliance Memory, Inc. |
IC DRAM 2GBIT PARALLEL 96FBGA |
|
AT27C080-15RIRoving Networks / Microchip Technology |
IC EPROM 8MBIT PARALLEL 32SOIC |
|
IS61VF102418A-7.5B3IISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
IDT71V3558SA200BQGI8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |