MEMS OSC XO 4.0000MHZ H/LV-CMOS
IC DAC 14BIT V-OUT 8DIP
CIR BRKR THRM 3A 250VAC 32VDC
IC FLASH 512MBIT PAR 64EASYBGA
类型 | 描述 |
---|---|
系列: | Axcell™ |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 512Mb (32M x 16) |
内存接口: | Parallel |
时钟频率: | 52 MHz |
写周期时间 - 字,页: | 100ns |
访问时间: | 100 ns |
电压 - 电源: | 1.7V ~ 2V |
工作温度: | -40°C ~ 85°C (TC) |
安装类型: | Surface Mount |
包/箱: | 64-TBGA |
供应商设备包: | 64-EasyBGA (8x10) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
IS42S32400B-7B-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 90TFBGA |
![]() |
SST39VF040-70-4C-B3KERoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 48TFBGA |
![]() |
AT45DB321D-MWU-SL954Adesto Technologies |
IC FLASH 32MBIT SPI 66MHZ 8VDFN |
![]() |
AT49LV002T-12PIRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32DIP |
![]() |
MT46V32M8TG-75 L:G TRMicron Technology |
IC DRAM 256MBIT PARALLEL 66TSOP |
![]() |
24FC512-I/SNRoving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 1MHZ 8SOIC |
![]() |
IS42S16160B-6BISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 54LFBGA |
![]() |
MT48LC8M32LFF5-8Micron Technology |
IC DRAM 256MBIT PARALLEL 90VFBGA |
![]() |
AT25320AY1-10YI-1.8Roving Networks / Microchip Technology |
IC EEPROM 32KBIT SPI 20MHZ 8MAP |
![]() |
IDT71024S20YI8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 32SOJ |
![]() |
70V9269S12PRF8/703Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 128TQFP |
![]() |
SST39WF800A-90-4I-B3KE-TRoving Networks / Microchip Technology |
IC FLASH 8MBIT PARALLEL 48TFBGA |
![]() |
M29W400DB70ZE6EMicron Technology |
IC FLASH 4MBIT PARALLEL 48TFBGA |