English
简体中文
CRYSTAL 32.0000MHZ 12PF SMD
MEMS OSC XO 3.5700MHZ LVCMOS SMD
MEMS OSC XO 27.0000MHZ H/LV-CMOS
IC DRAM 256MBIT PAR 144LFBGA
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - DDR |
| 内存大小: | 256Mb (8M x 32) |
| 内存接口: | Parallel |
| 时钟频率: | 200 MHz |
| 写周期时间 - 字，页: | 15ns |
| 访问时间: | 700 ps |
| 电压 - 电源: | 2.3V ~ 2.7V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 144-LFBGA |
| 供应商设备包: | 144-LFBGA (12x12) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BR24T08F-WE2ROHM Semiconductor |
IC EEPROM 8KBIT I2C 400KHZ 8SOP |
|
IS46TR16128C-125KBLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 96TWBGA |
|
MT58L128L32F1T-6.8Rochester Electronics |
IC SRAM 4MBIT PARALLEL 100TQFP |
|
71V3576S133BGIRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
S26KS512SDGBHN030Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 24FBGA |
|
70V3579S6BC8Renesas Electronics America |
IC SRAM 1.125MBIT PAR 256CABGA |
|
CY62138CV33LL-70BAIRochester Electronics |
STANDARD SRAM, 256KX8, 70NS |
|
71V416S15BEGI8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 48CABGA |
|
CY7C1470V33-167BZCRochester Electronics |
ZBT SRAM, 2MX36, 3.4NS, CMOS, PB |
|
CY7C0851AV-133AXCRochester Electronics |
IC SRAM 2MBIT PARALLEL 176TQFP |
|
W631GG8MB-15 TRWinbond Electronics Corporation |
IC DRAM 1GBIT PARALLEL 78VFBGA |
|
24AA044T-E/MUYRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 1MHZ 8UDFN |
|
S29AL008J70TFI010Cypress Semiconductor |
IC FLASH 8MBIT PARALLEL 48TSOP |