类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 4Kb (512 x 8, 256 x 16) |
内存接口: | SPI |
时钟频率: | 3 MHz |
写周期时间 - 字,页: | 6ms |
访问时间: | - |
电压 - 电源: | 2.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY62157G30-45BVXICypress Semiconductor |
IC SRAM 8MBIT PARALLEL 48VFBGA |
|
BR24S16FVJ-WE2ROHM Semiconductor |
IC EEPROM 16KBIT I2C 8TSSOP |
|
AS4C16M16MD1-6BCNTRAlliance Memory, Inc. |
IC DRAM 256MBIT PARALLEL 60FPBGA |
|
UPD44324182BF5-E40-FQ1Rochester Electronics |
DDR SRAM, 2MX18, 0.45NS |
|
93C86AT-E/OTRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI SOT23-6 |
|
SST39VF6401B-70-4C-B1KE-TRoving Networks / Microchip Technology |
IC FLASH 64MBIT PARALLEL 48TFBGA |
|
W9825G6KH-5 TRWinbond Electronics Corporation |
IC DRAM 256MBIT PAR 54TSOP II |
|
AF016GEC5X-2001EXATP Electronics, Inc. |
IC 16GBIT 153BGA |
|
93C56B-E/PRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8DIP |
|
93AA56AT-I/MSRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8MSOP |
|
NV25160DTHFT3GSanyo Semiconductor/ON Semiconductor |
IC EEPROM 16KBIT SPI 8TSSOP |
|
S29GL128S90DHSS13Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
GD25Q16CEIGRGigaDevice |
IC FLASH 16MBIT SPI/QUAD 8USON |