类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 1Kb (128 x 8) |
内存接口: | I²C |
时钟频率: | 400 kHz |
写周期时间 - 字,页: | 10ms |
访问时间: | 900 ns |
电压 - 电源: | 2.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS42VM16200D-6BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 32MBIT PARALLEL 54TFBGA |
|
IS62WV10248EBLL-45TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 8MBIT PARALLEL 44TSOP II |
|
S25FL116K0XMFA043Flip Electronics |
IC FLASH 16MBIT SPI/QUAD 8SOIC |
|
AT45DB641E-MHN2B-TAdesto Technologies |
IC FLASH 64MBIT SPI 85MHZ 8UDFN |
|
BR25H320FJ-2CE2ROHM Semiconductor |
IC EEPROM 32KBIT SPI 10MHZ 8SOPJ |
|
CY7C1007B-15VXCRochester Electronics |
SRAM CHIP ASYNC DUAL 5V 1M BIT 1 |
|
25LC080DT-E/MSRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 10MHZ 8MSOP |
|
MT58L64L32PT-10Rochester Electronics |
CACHE SRAM, 64KX32, 5NS PQFP100 |
|
CY7C1320KV18-250BZXCRochester Electronics |
DDR SRAM, 512KX36, 0.45NS PBGA16 |
|
CY7C1513KV18-300BZIRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
SST25VF010A-33-4C-QAE-TRoving Networks / Microchip Technology |
IC FLASH 1MBIT SPI 33MHZ 8WSON |
|
CY62167EV30LL-45BVXITCypress Semiconductor |
IC SRAM 16MBIT PARALLEL 48VFBGA |
|
CY7C1041GN30-10BVJXICypress Semiconductor |
IC SRAM 4MBIT PARALLEL 48VFBGA |