English
简体中文
IC DRAM 64MBIT PAR 54TSOP II
MOSFET N-CH 80V 13A/59A 5DFN
CONN BARRIER STRP 17CIRC 0.438"
TRANSMITTER TOSA
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM |
| 内存大小: | 64Mb (4M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | 167 MHz |
| 写周期时间 - 字，页: | 12ns |
| 访问时间: | 5.4 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 54-TSOP (0.400", 10.16mm Width) |
| 供应商设备包: | 54-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BR24T01FJ-WE2ROHM Semiconductor |
IC EEPROM 1KBIT I2C 400KHZ 8SOPJ |
|
MB85RS128BPNF-G-JNERE1Fujitsu Electronics America, Inc. |
IC FRAM 128KBIT SPI 33MHZ 8SOP |
|
MT58L64L36FT-8Rochester Electronics |
CACHE SRAM, 64KX36 |
|
CY7C1021BV33L-15VCRochester Electronics |
STANDARD SRAM, 64KX16, 15NS |
|
IS42S16320D-6TL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 54TSOP II |
|
AS7C32098A-20TINAlliance Memory, Inc. |
IC SRAM 2MBIT PARALLEL 44TSOP2 |
|
CY7C09369V-9ACRochester Electronics |
DUAL-PORT SRAM, 16KX18, 9NS |
|
SNJ54LS170JRochester Electronics |
STANDARD SRAM, 4X4, 45NS, TTL |
|
BR24S08FVT-WE2ROHM Semiconductor |
IC EEPROM 8KBIT I2C 8TSSOPB |
|
AT93C66A-10TQ-2.7Rochester Electronics |
EEPROM, 256X16, SERIAL, CMOS |
|
70V7339S133BCRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 256CABGA |
|
25LC128T-I/STRoving Networks / Microchip Technology |
IC EEPROM 128KBIT SPI 8TSSOP |
|
93C46C-I/MSRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 3MHZ 8MSOP |