English
简体中文
ERL-32 499 1% T-1 RLR32C4990FM R
FUSE CERM 20A 250VAC 125VDC 3AB
RAIL PANEL MT SQ HOLE 85.75"
IC SRAM 16MBIT PAR 52TSOP II
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 16Mb (1M x 16, 2M x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 55ns |
| 访问时间: | 55 ns |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 52-TFSOP (0.350", 8.89mm Width) |
| 供应商设备包: | 52-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CAT24C16LIRochester Electronics |
IC EEPROM 16KBIT I2C 400KHZ 8DIP |
|
IS42SM32160E-75BL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 90TFBGA |
|
24C01CT-I/MSRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 400KHZ 8MSOP |
|
IS45S16160J-7BLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 54TFBGA |
|
BR24L01AFV-WE2ROHM Semiconductor |
IC EEPROM 1KBIT I2C 8SSOPB |
|
IS62WV25616EALL-55TLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
93AA86C-I/STRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 3MHZ 8TSSOP |
|
MT53E128M32D2DS-046 WT:AMicron Technology |
IC DRAM 4GBIT 2.133GHZ 200WFBGA |
|
71V3556SA133BG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
AT25160B-MAHL-TRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 20MHZ 8UDFN |
|
24LC16B-E/STRoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 8TSSOP |
|
S25FL256LAGMFN001Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 16SOIC |
|
R1LP0108ESA-5SI#S0Rochester Electronics |
IC SRAM 1MBIT PARALLEL 32STSOP |