







MOSFET N-CH 34V 12A/44A TDSON
MINI-CLAMP COMMON SOCKET
IC SRAM 9MBIT PARALLEL 119PBGA
CPS19-NC00A10-SNCCWTNF-AI0YBVAR-W1007-S
SWITCH PUSH SPST-NC 100MA 42V
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, SDR |
| 内存大小: | 9Mb (256K x 36) |
| 内存接口: | Parallel |
| 时钟频率: | 133 MHz |
| 写周期时间 - 字,页: | - |
| 访问时间: | 4.2 ns |
| 电压 - 电源: | 3.135V ~ 3.465V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 119-BGA |
| 供应商设备包: | 119-PBGA (14x22) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
24LC512T-E/SMRoving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 8SOIJ |
|
|
CY7C1361S-133AXCRochester Electronics |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
|
7133LA25PFIRenesas Electronics America |
IC SRAM 32KBIT PARALLEL 100TQFP |
|
|
24LC515-I/SMRoving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 8SOIJ |
|
|
24AA32AT-I/STRoving Networks / Microchip Technology |
IC EEPROM 32KBIT I2C 8TSSOP |
|
|
MT58L64L36PT-6TRRochester Electronics |
SRAM SYNC QUAD 2M-BIT 64KX36 |
|
|
70T651S10BFIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 208CABGA |
|
|
S29GL256S10FAIV13Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
|
IS45S32200L-7BLA2-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PARALLEL 90TFBGA |
|
|
MT28EW01GABA1HJS-0AAT TRMicron Technology |
IC FLASH 1GBIT PARALLEL 56TSOP |
|
|
W25Q256JVEIQ TRWinbond Electronics Corporation |
IC FLASH 256MBIT SPI/QUAD 8WSON |
|
|
CY7C1032-10JCRochester Electronics |
CACHE SRAM, 64KX18, 10NS PQCC52 |
|
|
70V25L15PFGRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 100TQFP |