类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 4Mb (512K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 10ns |
访问时间: | 10 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 44-TSOP (0.400", 10.16mm Width) |
供应商设备包: | 44-TSOP2 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY14ME064J2A-SXIRochester Electronics |
IC NVSRAM 64KBIT I2C 8SOIC |
|
93AA46CXT-I/SNRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 3MHZ 8SOIC |
|
S25FL128SDPBHVC00Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 24BGA |
|
11LC010T-E/MSRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SGL WIRE 8MSOP |
|
RC28F640P30T85ARochester Electronics |
IC FLASH 64MBIT PAR 64EASYBGA |
|
71V124SA20PHGIRochester Electronics |
IC SRAM 1MBIT PARALLEL 32TSOP II |
|
25LC256T-I/MFRoving Networks / Microchip Technology |
IC EEPROM 256KBIT SPI 10MHZ 8DFN |
|
S25FL064LABNFV011Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 8WSON |
|
MT53E256M32D2DS-046 AAT:BMicron Technology |
IC DRAM 8GBIT 2.133GHZ 200WFBGA |
|
NM24C02M8XRochester Electronics |
IC EEPROM 2KBIT I2C 100KHZ 8SOIC |
|
HM1-6518-5Rochester Electronics |
1024 X 1 CMOS RAM |
|
24LC00T-I/OTGRoving Networks / Microchip Technology |
IC EEPROM 128B I2C SOT23-5 |
|
SST39VF400A-70-4I-B3KE-TRoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 48TFBGA |