English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, SDR |
| 内存大小: | 2Mb (64K x 32) |
| 内存接口: | Parallel |
| 时钟频率: | 133 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 4 ns |
| 电压 - 电源: | 3.15V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 100-LQFP |
| 供应商设备包: | 100-TQFP (14x20) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SST39VF010-70-4C-NHERoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32PLCC |
|
CY7C1371D-100AXCRochester Electronics |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
SST39LF020-55-4C-WHERoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32VSOP |
|
24LC08BT-I/STRoving Networks / Microchip Technology |
IC EEPROM 8KBIT I2C 8TSSOP |
|
24LC32AFT-E/STRoving Networks / Microchip Technology |
IC EEPROM 32KBIT I2C 8TSSOP |
|
IS43R86400D-6TLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 66TSOP II |
|
71V67803S166PFGRochester Electronics |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
AS6C62256-55STCNAlliance Memory, Inc. |
IC SRAM 256KBIT PARALLEL 28STSOP |
|
IS45S16160J-7CTLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
|
CY14B256LA-ZS25XIRochester Electronics |
IC NVSRAM 256KBIT PAR 44TSOP II |
|
CY7C1515V18-167BZXIRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
24LC1025-E/PRoving Networks / Microchip Technology |
IC EEPROM 1MBIT I2C 400KHZ 8DIP |
|
NM24C03LNRochester Electronics |
IC EEPROM 2KBIT I2C 100KHZ 8DIP |
