English
简体中文
RES ARRAY 8 RES 510K OHM 1606
IC DRAM 576MBIT PAR 168FCBGA
DGTL ISO 5000VRMS 3CH GP 16SOIC
XTAL OSC XO 106.2500MHZ HCMOS
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | DRAM |
| 内存大小: | 576Mb (16M x 36) |
| 内存接口: | Parallel |
| 时钟频率: | 1.066 GHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 10 ns |
| 电压 - 电源: | 1.28V ~ 1.42V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 168-LBGA |
| 供应商设备包: | 168-FC(LF)BGA (13.5x13.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CY7C136A55JXIRochester Electronics |
DUAL-PORT SRAM, 2KX8, 55NS |
|
AS4C64M4SA-6TINAlliance Memory, Inc. |
IC DRAM 256MBIT PAR 54TSOP II |
|
MT41K256M16TW-107 AIT:P TRMicron Technology |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
71T75602S133BGIRochester Electronics |
IC SRAM 18MBIT PARALLEL 119PBGA |
|
71V321L35JGIRochester Electronics |
IC SRAM 16KBIT PARALLEL 52PLCC |
|
BR24G08FJ-3AGTE2ROHM Semiconductor |
IC EEPROM 8KBIT I2C 1MHZ 8SOPJ |
|
S25FL256SAGBHI300Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 24BGA |
|
71V424L15PHGI8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
CY62126DV30L-55BVXERochester Electronics |
IC SRAM 1MBIT PARALLEL 48VFBGA |
|
IS42S32800G-7BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 90TFBGA |
|
AT24C04D-PUMRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 1MHZ 8DIP |
|
CY62138FV30LL-45ZAXARochester Electronics |
STANDARD SRAM, 256KX8, 45NS PDSO |
|
CAT25020LIRochester Electronics |
IC EEPROM 2KBIT SPI 20MHZ 8DIP |