English
简体中文
RES 7.87 OHM 1% 1/4W AXIAL
MEMS OSC XO 166.666666MHZ LVDS
IC FLASH 512MBIT PARALLEL 64BGA
CONN RCPT FMALE 8P GOLD SLDR CUP
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | GL-S |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NOR |
| 内存大小: | 512Mb (32M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 60ns |
| 访问时间: | 110 ns |
| 电压 - 电源: | 1.65V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 64-LBGA |
| 供应商设备包: | 64-Fortified BGA (13x11) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
93LC66C-I/SNRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 3MHZ 8SOIC |
|
DS1249W-100INDRochester Electronics |
IC NVSRAM 2MBIT PARALLEL 32EDIP |
|
71256SA20YGRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
CY62146EV30LL-45ZSXARochester Electronics |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
CY7C1387BV25-150ACRochester Electronics |
CACHE SRAM, 1MX18, 3.8NS |
|
GS81302DT38GE-500IGSI Technology |
IC SRAM 144MBIT PAR 165FPBGA |
|
BR24C32A-10TU-1.8ROHM Semiconductor |
IC EEPROM 32KBIT I2C 8TSSOP |
|
24AA64FT-I/OTRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C SOT23-5 |
|
24AA512-I/ST14Roving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 14TSSOP |
|
70T3599S200BC8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 256CABGA |
|
MX25L25645GZNI-10GMacronix |
IC FLSH 256MBIT SPI 120MHZ 8WSON |
|
70V07L35PFGIRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 80TQFP |
|
IS61C1024AL-12JLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 32SOJ |