类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR (ZBT) |
内存大小: | 9Mb (256K x 36) |
内存接口: | Parallel |
时钟频率: | 100 MHz |
写周期时间 - 字,页: | - |
访问时间: | 5 ns |
电压 - 电源: | 3.135V ~ 3.465V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 119-BGA |
供应商设备包: | 119-PBGA (14x22) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AS4C16M16SA-6BINTRAlliance Memory, Inc. |
IC DRAM 256MBIT PARALLEL 54TFBGA |
|
S29GL512T12DHVV10Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64FBGA |
|
MTFC8GLWDQ-3L AIT ZMicron Technology |
IC FLASH 64GBIT MMC 100LBGA |
|
S25FL256LAGMFA003Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 16SOIC |
|
70V25L20PFGIRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 100TQFP |
|
BR24C32-DW6TPROHM Semiconductor |
IC EEPROM 32KBIT I2C 8TSSOP |
|
ACE1202EMRochester Electronics |
8-BIT, EEPROM, ACE1202 CPU, 1MHZ |
|
CY7C1345A-100ACRochester Electronics |
STANDARD SRAM, 128KX36 |
|
70V3579S5BFI8Renesas Electronics America |
IC SRAM 1.125MBIT PAR 208CABGA |
|
IS42S32160F-75EBL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 90TFBGA |
|
MX25L6433FZNI-08QMacronix |
IC FLASH 64MBIT SPI/QUAD 8WSON |
|
TMS27C291-3JLRochester Electronics |
UVPROM, 2KX8, 35NS, CMOS |
|
CY62147GE-45ZSXITCypress Semiconductor |
IC SRAM 4MBIT PARALLEL 44TSOP II |