类型 | 描述 |
---|---|
系列: | GL-S |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 64Mb (8M x 8, 4M x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 60ns |
访问时间: | 80 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 105°C (TA) |
安装类型: | Surface Mount |
包/箱: | 64-LBGA |
供应商设备包: | 64-FBGA (9x9) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
24AA025T-I/OTRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C SOT23-6 |
|
CY7C1024AV33-10ACTRochester Electronics |
STANDARD SRAM, 128KX24 |
|
S25FL064LABBHV033Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 24BGA |
|
11LC020T-E/MSRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SGL WIRE 8MSOP |
|
AS4C16M16SA-6TINTRAlliance Memory, Inc. |
IC DRAM 256MBIT PAR 54TSOP II |
|
MR4A16BCMA35REverspin Technologies, Inc. |
IC RAM 16MBIT PARALLEL 48FBGA |
|
11LC080T-I/MSRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SGL WIRE 8MSOP |
|
MT49H32M18CSJ-18:BMicron Technology |
IC DRAM 576MBIT PARALLEL 144FBGA |
|
CY7C1426KV18-250BZCTCypress Semiconductor |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
24AA02E48T-E/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8SOIC |
|
CY7C4021KV13-600FCXCRochester Electronics |
IC SRAM 72MBIT PARALLEL 361FCBGA |
|
25AA320A-I/MSRoving Networks / Microchip Technology |
IC EEPROM 32KBIT SPI 10MHZ 8MSOP |
|
CAT28LV64G20Rochester Electronics |
IC EEPROM 64KBIT PARALLEL 32PLCC |