







IC DRAM 256MBIT PARALLEL 60TFBGA
CONN TERM STRIP 8CIRC 0.571"
STRAIGHT PLUG
POT 5K OHM 3W WIREWOUND LINEAR
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - DDR |
| 内存大小: | 256Mb (16M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | 200 MHz |
| 写周期时间 - 字,页: | 15ns |
| 访问时间: | 700 ps |
| 电压 - 电源: | 2.3V ~ 2.7V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 60-TFBGA |
| 供应商设备包: | 60-TFBGA (8x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
71V3577S75BQ8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
|
AS6C4016-55ZINAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
|
IS61QDPB42M36A2-500B4LISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 72MBIT PARALLEL 165LFBGA |
|
|
AT24CM02-SSHD-BRoving Networks / Microchip Technology |
IC EEPROM 2MBIT I2C 1MHZ 8SOIC |
|
|
IS61DDB22M18C-250M3LISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 36MBIT PARALLEL 165LFBGA |
|
|
MT47H64M8SH-25E AAT:H TRMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
|
SST39VF010-70-4C-NHE-TRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32PLCC |
|
|
AS7C32098A-12TCNAlliance Memory, Inc. |
IC SRAM 2MBIT PARALLEL 44TSOP2 |
|
|
SN74LS601ADWRochester Electronics |
MEMORY CIRCUIT, 64KX1, TTL |
|
|
70V3599S166BCRenesas Electronics America |
IC SRAM 4.5MBIT PAR 256CABGA |
|
|
R1LV5256ESA-7SI#S0Rochester Electronics |
IC SRAM 256KBIT PARALLEL 28TSOP |
|
|
R1RW0416DSB-0PI#S0Rochester Electronics |
STANDARD SRAM, 256KX16, 10NS |
|
|
24LC32AT/SMRoving Networks / Microchip Technology |
IC EEPROM 32KBIT I2C 8SOIJ |