类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Not For New Designs |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 4Kb (512 x 8) |
内存接口: | I²C |
时钟频率: | 400 kHz |
写周期时间 - 字,页: | 5ms |
访问时间: | - |
电压 - 电源: | 2.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
供应商设备包: | 8-TSSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS43TR16128D-125KBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 96TWBGA |
|
CY7C1413TV18-250BZCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
S25FL256SAGMFIR00Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 16SOIC |
|
S26KL512SDABHI020Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 24FBGA |
|
25LC640AXT-I/STRoving Networks / Microchip Technology |
IC EEPROM 64KBIT SPI 8TSSOP |
|
AT49F4096A-70TCRochester Electronics |
IC FLASH 4MBIT PARALLEL 48TSOP |
|
UPD46365184BF1-E40Y-EQ1-ARochester Electronics |
QDR SRAM, 2MX18, 0.45NS |
|
71V632S7PFGIRochester Electronics |
IC SRAM 2MBIT PARALLEL 100TQFP |
|
S25FL256SAGMFB000Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 16SOIC |
|
BR24T32FVM-WTRROHM Semiconductor |
IC EEPROM 32KBIT I2C 8MSOP |
|
RM24C512C-LTAI-BAdesto Technologies |
IC CBRAM 512KBIT I2C 1MHZ 8TSSOP |
|
S-25A040A0A-J8T2UDABLIC U.S.A. Inc. |
IC EEPROM 4KBIT SPI 6.5MHZ 8SOPJ |
|
SST39SF040-70-4I-WHERoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 32TSOP |