







 
                            MEMS OSC XO 90.0000MHZ CMOS SMD
 
                            MOSFET N-CHANNEL 600V 8A TO251
 
                            1KX8 ROM, MASK-PROGRAMMABLE
 
                            CONN HEADER VERT 24POS 2.54MM
| 类型 | 描述 | 
|---|---|
| 系列: | * | 
| 包裹: | Bulk | 
| 零件状态: | Active | 
| 内存类型: | - | 
| 内存格式: | - | 
| 技术: | - | 
| 内存大小: | - | 
| 内存接口: | - | 
| 时钟频率: | - | 
| 写周期时间 - 字,页: | - | 
| 访问时间: | - | 
| 电压 - 电源: | - | 
| 工作温度: | - | 
| 安装类型: | - | 
| 包/箱: | - | 
| 供应商设备包: | - | 
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|   | 71256SA15YGIRenesas Electronics America | IC SRAM 256KBIT PARALLEL 28SOJ | 
|   | M24C16-RMN6PSTMicroelectronics | IC EEPROM 16KBIT I2C 400KHZ 8SO | 
|   | CY7C1362A-150AJCTRochester Electronics | SRAM CHIP SYNC DUAL 3.3V 9M BIT | 
|   | M5M5V108DKV-70H#STRochester Electronics | SRAM 1M-BIT (128K X 8) | 
|   | CY7C1568KV18-550BZXIRochester Electronics | IC SRAM 72MBIT PARALLEL 165FBGA | 
|   | W9751G8KB-25Winbond Electronics Corporation | IC DRAM 512MBIT PARALLEL 60WBGA | 
|   | DS2502+T&RMaxim Integrated | IC EPROM 1KBIT 1-WIRE TO92-3 | 
|   | IS61NLP25618A-200B3LI-TRISSI (Integrated Silicon Solution, Inc.) | IC SRAM 4.5MBIT PARALLEL 165PBGA | 
|   | IS62WV6416BLL-55TLIISSI (Integrated Silicon Solution, Inc.) | IC SRAM 1MBIT PARALLEL 44TSOP II | 
|   | CAT25160VI-GT3Sanyo Semiconductor/ON Semiconductor | IC EEPROM 16KBIT SPI 20MHZ 8SOIC | 
|   | 71V2556S150PFGIRenesas Electronics America | IC SRAM 4.5MBIT PARALLEL 100TQFP | 
|   | CY7C1380KV33-250AXCCypress Semiconductor | IC SRAM 18MBIT PARALLEL 100TQFP | 
|   | W9725G6KB-18Winbond Electronics Corporation | IC DRAM 256MBIT PARALLEL 84WBGA |