







 
                            DIODE SCHOTTKY 20V 5A DO201AD
 
                            DUAL-PORT SRAM, 512KX36, 5.2NS
| 类型 | 描述 | 
|---|---|
| 系列: | * | 
| 包裹: | Bulk | 
| 零件状态: | Active | 
| 内存类型: | - | 
| 内存格式: | - | 
| 技术: | - | 
| 内存大小: | - | 
| 内存接口: | - | 
| 时钟频率: | - | 
| 写周期时间 - 字,页: | - | 
| 访问时间: | - | 
| 电压 - 电源: | - | 
| 工作温度: | - | 
| 安装类型: | - | 
| 包/箱: | - | 
| 供应商设备包: | - | 
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
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|   | 71256L35YGRenesas Electronics America | IC SRAM 256KBIT PARALLEL 28SOJ | 
|   | CY7C1320JV18-300BZXCRochester Electronics | IC SRAM 18MBIT PARALLEL 165FBGA | 
|   | CY7C1367B-166AIRochester Electronics | CACHE SRAM, 512KX18, 3.5NS | 
|   | IS25WP032D-JBLE-TRISSI (Integrated Silicon Solution, Inc.) | IC FLASH 32MBIT SPI/QUAD 8SOIC | 
|   | HM1-65162-9Rochester Electronics | 2K X 8 ASYNCHRONOUS CMOS SRAM | 
|   | AT24C256N-10SQ-2.7Rochester Electronics | IC EEPROM 256KBIT I2C 8SOIC | 
|   | 25LC1024-E/MFRoving Networks / Microchip Technology | IC EEPROM 1MBIT SPI 20MHZ 8DFN | 
|   | IS62WV25616EALL-55BLIISSI (Integrated Silicon Solution, Inc.) | IC SRAM 4MBIT PARALLEL 48VFBGA | 
|   | 93C46C-E/SNRoving Networks / Microchip Technology | IC EEPROM 1KBIT SPI 3MHZ 8SOIC | 
|   | 24LC16BT-I/MCRoving Networks / Microchip Technology | IC EEPROM 16KBIT I2C 400KHZ 8DFN | 
|   | MT40A256M16LY-062E AAT:FMicron Technology | IC DRAM 4GBIT PARALLEL 96FBGA |