类型 | 描述 |
---|---|
系列: | FL-L |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 128Mb (16M x 8) |
内存接口: | SPI - Quad I/O, QPI |
时钟频率: | 66 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 105°C (TA) |
安装类型: | Surface Mount |
包/箱: | 16-SOIC (0.295", 7.50mm Width) |
供应商设备包: | 16-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AS7C3256A-10TCNAlliance Memory, Inc. |
IC SRAM 256KBIT PAR 28TSOP I |
|
IS61QDP2B251236A-333M3LISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165LFBGA |
|
W631GU6MB11I TRWinbond Electronics Corporation |
IC DRAM 1GBIT PARALLEL 96VFBGA |
|
N08L63W2AB27IRochester Electronics |
IC SRAM 4MBIT PARALLEL 48BGA |
|
S25FL256SDSMFBG03Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 16SOIC |
|
IS65WV12816BLL-55TLA3ISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 2MBIT PARALLEL 44TSOP II |
|
IS43DR16160B-25DBLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 84TWBGA |
|
IS43TR16512AL-15HBL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 8GBIT PARALLEL 96LFBGA |
|
S29JL064J60BHA000Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 48FBGA |
|
CY7C1051H30-10BV1XECypress Semiconductor |
IC SRAM 8MBIT PARALLEL 48VFBGA |
|
MD2114AL-3/BRochester Electronics |
1K X 4 SRAM |
|
CY14MB064Q2B-SXIRochester Electronics |
IC NVSRAM 64KBIT SPI 40MHZ 8SOIC |
|
S29GL064S80TFV030Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 48TSOP |