English
简体中文
CRYSTAL 12.0000MHZ 8PF SMD
MEMS OSC XO 24.0000MHZ H/LV-CMOS
PFET, 120A I(D), 40V, 0.0023OHM,
IC PSRAM 256MBIT PAR 54VFBGA
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | PSRAM |
| 技术: | PSRAM (Pseudo SRAM) |
| 内存大小: | 256Mb (16M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | 133 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 70 ns |
| 电压 - 电源: | 1.7V ~ 1.95V |
| 工作温度: | -40°C ~ 85°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 54-VFBGA |
| 供应商设备包: | 54-VFBGA (6x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FM34W02ULM8Rochester Electronics |
EEPROM, 256X8, SERIAL, CMOS |
|
S25FL256SAGMFNG00Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 16SOIC |
|
BR25S128FVT-WE2ROHM Semiconductor |
IC EEPROM 128K SPI 20MHZ 8TSSOP |
|
IS42S32400F-7BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 90TFBGA |
|
S-93C46BD0I-I8T1UABLIC U.S.A. Inc. |
IC EEPROM 1KBIT SPI 2MHZ SNT8A |
|
MT29F4G08ABAEAH4-ITS:E TRMicron Technology |
IC FLASH 4GBIT PARALLEL 63VFBGA |
|
S34ML02G104BHB013Flip Electronics |
IC FLASH 2GBIT PARALLEL 63BGA |
|
RM25C64C-LSNI-BAdesto Technologies |
IC CBRAM 64KBIT SPI 10MHZ 8SOIC |
|
93LC86AT-E/OTRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI SOT23-6 |
|
M24C16-DRMN8TP/KSTMicroelectronics |
IC EEPROM 16KBIT I2C 1MHZ 8SO |
|
CY62147DV30LL-45BVXIRochester Electronics |
STANDARD SRAM, 256KX16, 45NS |
|
AS4C64M8D2-25BCNTRAlliance Memory, Inc. |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
CY14V116G7-BZ30XICypress Semiconductor |
NO WARRANTY |