类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM |
内存大小: | 32Mb (4M x 8, 2M x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 55ns |
访问时间: | 55 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 48-TFSOP (0.724", 18.40mm Width) |
供应商设备包: | 48-TSOP I |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S25FL128LAGNFB010Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 8WSON |
|
BQ2024DBZRRochester Electronics |
IC EPROM 1.5KBIT SGL WIRE SOT23 |
|
CY7C1049CV33-10ZXIRochester Electronics |
STANDARD SRAM |
|
24LC025T-I/MNYRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8TDFN |
|
M95512-RDW6PSTMicroelectronics |
IC EEPROM 512KBIT SPI 8TSSOP |
|
24AA256-E/PRoving Networks / Microchip Technology |
IC EEPROM 256KBIT I2C 8DIP |
|
AS6C1016-55ZINTRAlliance Memory, Inc. |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
71V2576S150PFRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
S25FS512SAGMFV010Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 16SOIC |
|
CY7C0430BV-100BGIRochester Electronics |
FOUR-PORT SRAM, 64KX18 |
|
SST38VF6401B-70I/TVRoving Networks / Microchip Technology |
IC FLASH 64MBIT PARALLEL 48TSOP |
|
RMLV1616AGBG-5S2#AC0Renesas Electronics America |
IC SRAM 16MBIT PARALLEL 48TFBGA |
|
93C76AT-I/OTRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 3MHZ SOT23-6 |