







 
                            CRYSTAL 26.0410MHZ 4PF SMD
 
                            OSC XO 2.048MHZ 3.3V HCMOS
 
                            POTENTIOMETER
 
                            IGBT 1200V ULTRA FAST DIE
| 类型 | 描述 | 
|---|---|
| 系列: | - | 
| 包裹: | Bulk | 
| 零件状态: | Obsolete | 
| igbt型: | - | 
| 电压 - 集电极发射极击穿(最大值): | - | 
| 电流 - 集电极 (ic) (max): | - | 
| 电流 - 集电极脉冲 (icm): | - | 
| vce(on) (max) @ vge, ic: | - | 
| 功率 - 最大值: | - | 
| 开关能量: | - | 
| 输入类型: | - | 
| 栅极电荷: | - | 
| td(开/关)@ 25°c: | - | 
| 测试条件: | - | 
| 反向恢复时间 (trr): | - | 
| 工作温度: | - | 
| 安装类型: | - | 
| 包/箱: | - | 
| 供应商设备包: | - | 
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|   | IHY15N120R3XKSA1IR (Infineon Technologies) | IGBT 1200V 30A 254W TO247HC-3 | 
|   | IRGIB4607DPBFIR (Infineon Technologies) | IGBT 600V FULLPAK220 COPAK | 
|   | IRG7CH81K10EF-RIR (Infineon Technologies) | IGBT 1200V ULTRA FAST DIE | 
|   | IRGC4067EFX7SA1IR (Infineon Technologies) | IGBT CHIP | 
|   | STGF3HF60HDSTMicroelectronics | IGBT 600V 7.5A TO220FP | 
|   | IRG4CC50WCIR (Infineon Technologies) | IGBT CHIP | 
|   | XGB8206ARIWickmann / Littelfuse | IGBT N-CH 20A 350V D2PAK | 
|   | SIGC06T60EX7SA1IR (Infineon Technologies) | IGBT 3 CHIP 600V 10A WAFER | 
|   | IXGM40N60ALWickmann / Littelfuse | POWER MOSFET TO-3 | 
|   | AUIRGC76524N0BIR (Infineon Technologies) | DIODE IGBT | 
|   | SIGC178T65DCEAX7SA2IR (Infineon Technologies) | DIODE GENERAL PURPOSE 650V | 
|   | SIGC18T60NCX1SA4IR (Infineon Technologies) | IGBT 3 CHIP 600V WAFER | 
|   | NGTD13T65F2SWKSanyo Semiconductor/ON Semiconductor | IGBT TRENCH FIELD STOP 650V DIE |